The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high-speed switching applications in power supplies, PWM motor controls, high-efficiency DC-DC converters, and bridge circuits.

Features

• Type Designator: 2N60
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 54 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 2 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 35 nS
• Drain-Source Capacitance (Cd): 45 pF
• Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm

Supplier link: https://datasheetspdf.com/pdf-file/1290061/ARTCHIP/2N60/1