The 2SK3878 is a silicon N-channel enhancement-mode MOSFET designed for high-voltage switching applications. With a drain-source voltage rating of 900 V and continuous drain current of 9 A, it’s suitable for power supplies, motor drivers, and inverter circuits.

Specifications

• Type: N-channel enhancement-mode MOSFET
• Drain-Source Voltage (V_DSS): 900 V
• Continuous Drain Current (I_D): 9 A
• Pulsed Drain Current (I_DP): 27 A
• Gate-Source Voltage (V_GSS): ±30 V
• On-Resistance (R_DS(on)): 1.0 Ω (typ.)
• Forward Transfer Admittance (Y_fs): 7.0 S (typ.)
• Gate Threshold Voltage (V_th): 2.0–4.0 V
• Leakage Current (I_DSS): ≤ 100 μA (V_DS = 720 V)
• Avalanche Energy (E_AS): 778 mJ
• Repetitive Avalanche Energy (E_AR): 15 mJ
• Avalanche Current (I_AR): 9 A
• Power Dissipation (P_D): 150 W (Tc = 25 °C)
• Channel Temperature (T_ch): 150 °C max
• Package: TO-3P (SC-65)
• Pinout:
  1. Gate
  2. Drain (heatsink tab)
  3. Source

Features

• High-voltage tolerance for 900 V switching applications
• Low R_DS(on) and high current handling for efficient power delivery
• Suitable for flyback converters, motor drivers, and inverter stages
• TO-3P package with heatsink tab for thermal management
• Common use cases:
  - SMPS and switching regulators
  - Motor control and inverter circuits
  - High-voltage DC switching
  - Industrial and consumer power electronics