Specifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.

Features

• Advanced Process Technology
• Ultra Low On-Resistance 
• 175°C Operating Temperature
• Fast Switching

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