The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Features:

• RDS(ON)≦4.8mΩ@VGS=10V
• RDS(ON)≦9mΩ@VGS=4.5V
• ESD Protected
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability

Applications:

• Power Management in Note book
• Battery Powered System
• DC/DC Converter
• Load Switch

Datasheet: https://datasheetspdf.com/pdf-file/1252263/Matsuki/ME90N03/1