The Original 60T65PES (MBQ60T65PES) 650V 60A Field Stop Trench IGBT is a high-power, high-speed insulated gate bipolar transistor co-packaged with an ultra-fast soft-recovery freewheeling diode. Housed in a heavy-duty TO-247 through-hole package, this device utilizes advanced 2nd Generation Field Stop Trench technology to deliver an exceptionally low collector-emitter saturation voltage (Vce(sat)) of 1.85V, high short-circuit ruggedness, and low total switching energy losses. It is widely used in high-frequency inverter welding machines, solar photovoltaic (PV) inverters, uninterruptible power supplies (UPS), induction heating (IH) cookers, and active power factor correction (PFC) systems.

Specifications

• Part Number / Model: 60T65PES / MBQ60T65PES / MBQ60T65PESTH
• Transistor Type: N-Channel Field Stop Trench IGBT with Anti-Parallel Fast Recovery Diode
• Package Type: TO-247
• Collector-Emitter Breakdown Voltage (Vces / Vceo): 650V
• Gate-Emitter Voltage (Vges): ±20V DC
• Continuous Collector Current (Ic):
  • 120A (at Tc = 25°C)
  • 60A (at Tc = 100°C)
• Pulsed Collector Current (Icpuls): 180A Peak
• Diode Continuous Forward Current (If): 60A (at Tc = 25°C) / 30A (at Tc = 100°C)
• Collector-Emitter Saturation Voltage (Vce(sat)): Typ. 1.85V / Max. 2.4V (at Vge = 15V, Ic = 60A, Tvj = 25°C)
• Diode Forward Voltage Drop (Vf): Typ. 1.45V to 1.60V / Max. 2.05V (at If = 30A)
• Gate-Emitter Threshold Voltage (Vge(th)): 4.0V to 6.0V (Typ. 4.5V to 5.0V at Ic = 0.5mA)
• Turn-On / Turn-Off Energy Loss (Eon / Eoff): Typ. 0.92mJ / Typ. 0.53mJ (at Tc = 25°C)
• Diode Reverse Recovery Time (trr): Typ. 110ns
• Short-Circuit Withstand Time (tsc): ≥ 5µs (at Vcc ≤ 400V, Vge = 15V, Tvj = 150°C)
• Total Power Dissipation (Pd): Up to 420W (at Tc = 25°C) / ~214W (at Tc = 100°C)
• Operating Junction Temperature (Tvj / Tj): -40°C to +175°C
• Pinout Configuration: Pin 1: Gate (G), Pin 2: Collector (C), Pin 3: Emitter (E), Tab: Collector (C)

Features

• Advanced Field Stop Trench Technology: Provides a positive temperature coefficient for easy paralleling while maintaining low Vce(sat) conduction losses.
• Low Switching Losses (Eon/Eoff): Fast turn-off characteristics reduce dynamic power losses, allowing high-frequency switching operations (20kHz to 60kHz+).
• Built-in Fast & Soft Recovery Diode: Integrated anti-parallel diode eliminates reverse voltage overshoot and ringing during inductive freewheeling periods.
• High Short-Circuit Ruggedness (5µs): High fault-current tolerance provides critical protection against inverter bridge shoot-through and accidental load shorts.
• Extended 175°C Junction Temperature: Delivers a wide thermal safety margin and exceptional reliability under heavy, continuous industrial operating loads.

Common Applications

• Inverter Arc & TIG Welding Machines: Primary and secondary bridge power switching stages for 160A–250A industrial welders.
• Solar PV Inverters & ESS: High-efficiency DC-AC inversion bridges and DC-DC boost converters in photovoltaic systems.
• Uninterruptible Power Supplies (UPS): Online double-conversion and industrial power backup systems.
• Induction Heating (IH) Systems: Resonant tank switching in commercial induction cookers, melting furnaces, and heaters.
• Active Power Factor Correction (PFC): High-voltage boost switching stages for telecom rectifiers and server power supplies.

Usage Tips

• Gate Drive Optimization: Drive with a clean +15V gate voltage for full turn-on saturation to achieve the specified 1.85V Vce(sat), and use 0V to -5V turn-off bias to prevent spurious Miller turn-on in noisy inverter bridges.
• Gate Damping Resistor: Place a series gate resistor (typically 4.7Ω to 15Ω) directly at Pin 1 (Gate) to suppress voltage ringing and tailor turn-on/turn-off slew rates.
• Heatsink Mounting & Isolation: Mount the TO-247 tab flat to an aluminum heatsink using high-performance thermal paste. Use a dedicated TO-247/TO-3P silicone insulating pad and nylon bushing if the heatsink is chassis-grounded.
• DC Bus Snubbering: Install high-frequency, low-inductance film/ceramic snubber capacitors directly across the DC link bus close to the collector and emitter pins to suppress inductive turn-off voltage spikes.

Datasheet