The Original IRFPS40N50L 500V 46A N-Channel Power MOSFET (TO-247) is a high-voltage, high-current HEXFET power MOSFET designed for high-efficiency switch-mode power conversion, zero-voltage switching (ZVS) topologies, and high-frequency power applications. Featuring an ultra-low on-state resistance (RDS(on) typ. 0.087Ω / max. 0.100Ω) combined with an integrated superfast body diode, it delivers outstanding switching speed, low reverse recovery charge, and minimal conduction losses. Housed in the heavy-duty clip-mounted Super-247 (TO-274AA / TO-247 profile) through-hole power package, it is capable of dissipating up to 540W with an avalanche current rating of 46A. The IRFPS40N50L is widely utilized in high-power telecom and server SMPS, uninterruptible power supplies (UPS), solar string inverters, induction heating systems, active PFC boost stages, and industrial motor drives.

Specifications

• Part Number: IRFPS40N50L
• Transistor Polarity: N-Channel Enhancement Mode Power MOSFET
• Package Type: TO-274
• Drain-Source Breakdown Voltage (V_DSS): 500 V (Min. at V_GS = 0V, I_D = 250µA)
• Gate-Source Voltage (V_GS): ±30 V Max.
• Continuous Drain Current (I_D):
  • At T_C = 25°C: 46 A (at V_GS = 10V)
  • At T_C = 100°C: 29 A
• Pulsed Drain Current (I_DM): Up to 180 A (Pulse width limited by max T_j)
• Static Drain-Source On-State Resistance (R_DS(on)):
  • Typ. 0.087 Ω (at V_GS = 10V, I_D = 28A)
  • Max. 0.100 Ω (at V_GS = 10V, I_D = 28A)
• Gate Threshold Voltage (V_GS(th)): 3.0 V to 5.0 V (at V_DS = V_GS, I_D = 250µA)
• Total Power Dissipation (P_D): Up to 540 W (at T_C = 25°C)
• Linear Derating Factor: 4.3 W/°C (Above 25°C)
• Single-Pulse Avalanche Energy (E_AS): 920 mJ (at I_AS = 46A, L = 0.86mH)
• Repetitive Avalanche Energy (E_AR): 54 mJ (at I_AR = 46A)
• Peak Diode Recovery dV/dt: 34 V/ns
• Total Gate Charge (Q_g): Typ. 250 nC / Max. 380 nC (at V_DS = 400V, V_GS = 10V, I_D = 46A)
• Gate-to-Source Charge (Q_gs): 80 nC
• Gate-to-Drain ("Miller") Charge (Q_gd): 190 nC
• Input Capacitance (C_iss): Typ. 8110 pF (at V_DS = 25V, V_GS = 0V, f = 1.0MHz)
• Output Capacitance (C_oss): Typ. 960 pF
• Reverse Transfer Capacitance (C_rss): Typ. 130 pF
• Effective Output Capacitance (C_{oss eff.}): Typ. 440 pF
• Switching Times (at V_DD = 250V, I_D = 46A, R_G = 0.85Ω, V_GS = 10V):
  • Turn-On Delay Time (t_d(on)): Typ. 27 ns
  • Rise Time (t_r): Typ. 170 ns
  • Turn-Off Delay Time (t_d(off)): Typ. 50 ns
  • Fall Time (t_f): Typ. 69 ns
• Body Diode Reverse Recovery Time (t_rr): Typ. 170 ns (Max. 250 ns at I_F = 46A, dI/dt = 100A/µs)
• Body Diode Continuous Forward Current (I_S): Up to 46 A
• Body Diode Forward Voltage (V_SD): Max. 1.5 V (at I_S = 46A, V_GS = 0V)
• Thermal Resistance (Junction-to-Case, R_θJC): 0.23 °C/W Max.
• Thermal Resistance (Case-to-Sink, Flat Greased Surface, R_θCS): 0.24 °C/W Typ.
• Thermal Resistance (Junction-to-Ambient, R_θJA): 40 °C/W Max.
• Operating Junction & Storage Temperature (T_j, T_stg): -55°C to +150°C
• Pinout Configuration (Super-247 / TO-247 - Front View, Leads Facing Down):
  • Pin 1: Gate (G) - Control Terminal
  • Pin 2: Drain (D) - Connected internally to Metal Heatsink Backing Tab
  • Pin 3: Source (S) - Power Return Terminal
  • Backing Tab: Drain (D)

Features

• Integrated Superfast Body Diode: Features an ultra-fast, soft-recovery intrinsic body diode (t_rr = 170 ns typ.) that eliminates the need for external anti-parallel diodes in Zero Voltage Switching (ZVS) resonant converters.
• Ultra-Low Thermal Resistance (R_θJC = 0.23°C/W): Heavy-duty Super-247 lead frame structure provides exceptional heat transfer into external heatsinks, enabling up to 540W continuous dissipation.
• Enhanced Dynamic dV/dt Ruggedness (34 V/ns): Superior immunity against false triggering and avalanche failure under steep high-frequency switching transients.
• High Gate Threshold Noise Immunity: 3.0V to 5.0V V_GS(th) range prevents accidental turn-on caused by capacitive Miller spikes in noisy high-power inverter environments.
• Low On-State Conduction Resistance: 0.087Ω typical R_DS(on) minimizes I²R power loss during continuous high-current (46A) conduction.

Common Applications

• High-Power SMPS & Server Power Supplies: Primary-side high-voltage switching stages in full-bridge and half-bridge resonant LLC converters.
• Zero Voltage Switching (ZVS) Resonant Topologies: Phase-shifted ZVS bridge converters where fast body diode recovery is essential.
• Uninterruptible Power Supplies (UPS): DC-DC boost converters and high-voltage DC-AC inverter bridges for online double-conversion units.
• Solar PV String Inverters: High-voltage MPPT boost converters and grid-tied inverter bridge legs.
• Induction Heating & Wireless Power: High-frequency resonant switching stages for induction heating coils and high-power wireless chargers.
• Active Power Factor Correction (PFC): High-power continuous conduction mode (CCM) boost PFC stages.

Usage Tips

• Gate Drive Voltage (V_GS): Drive the gate with a **regulated +10V to +15V DC signal** to ensure the MOSFET saturates fully and achieves its rated 0.087Ω on-resistance. Do not attempt to drive directly from 3.3V or 5V logic pins.
• Dedicated High-Peak-Current Gate Driver: Due to the high gate charge (Q_g up to 380 nC) and large input capacitance (C_iss ≈ 8110 pF), drive the gate with an isolated or high-speed MOSFET driver IC (such as the **UCC27531, TC4420, IR2110, or IXDD609**) capable of delivering at least **2A to 6A peak current**.
• Heatsinking & Electrical Isolation: The metal backing tab is **internally tied to Pin 2 (Drain)**, which carries high DC link voltages (up to 500V). If mounting multiple devices onto a shared heatsink, use high-grade ceramic (AlN/Alumina) or mica insulating pads with thermal grease and non-conductive mounting clips.
• Gate Loop Layout & Resistors: Place a low-value series gate resistor (typically **2.2Ω to 10Ω**) right next to Pin 1, and always place a **10kΩ pull-down resistor** directly across Gate and Source pins to prevent floating-gate turn-on during initial startup.
• High-Voltage DC Snubbers: To suppress inductive turn-off overvoltage ringing across Drain and Source, place low-inductance polypropylene film snubber capacitors (e.g., 0.1µF 630V/1000V) directly across the high-voltage DC link rails near the MOSFET legs.

Datasheet