This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features:

• 45A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time 108ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• New revolutionary high-voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

Datasheet: https://www.alldatasheet.com/datasheet-pdf/download/80068/INFINEON/20N60C3.html