The Original C3M0160120D 1200V 17A Silicon Carbide (SiC) Power MOSFET is a high-performance 3rd Generation (C3M) wide bandgap N-channel power transistor engineered by Wolfspeed (Cree). Housed in a standard through-hole TO-247-3 package, this SiC MOSFET features a high breakdown voltage of 1200V, low on-state resistance (Rds(on)) of 160mΩ, and extremely low parasitic capacitances. Delivering ultra-fast switching speeds, low switching losses, and high thermal conductivity, it is ideal for high-voltage solar string inverters, electric vehicle (EV) charging stations, high-voltage DC-DC converters, switch-mode power supplies (SMPS), and industrial motor drives.

Specifications

• Part Number / Model: C3M0160120D (Wolfspeed / Cree C3M MOSFET Family)
• Transistor Type: N-Channel Silicon Carbide (SiC) Power MOSFET
• Package Type: TO-247-3 
• Drain-Source Breakdown Voltage (Vds): 1200V
• Gate-Source Voltage (Vgs): -8V to +19V (Recommended Drive: Vgs_on = +15V to +18V, Vgs_off = -4V to 0V)
• Continuous Drain Current (Id):
  • 17.0A to 19.5A (at Tc = 25°C)
  • 11.5A to 13.0A (at Tc = 100°C)
• Pulsed Drain Current (Idm): 38A to 40A Peak
• Static Drain-Source On-Resistance (Rds(on)): Typ. 160mΩ / Max. 200mΩ (at Vgs = 15V, Id = 10A, Tj = 25°C)
• Total Gate Charge (Qg): Typ. 21nC to 28nC (at Vds = 800V, Id = 10A)
• Input Capacitance (Ciss): Typ. 600pF (at Vds = 800V, f = 1MHz)
• Output Capacitance (Coss): Typ. 35pF (at Vds = 800V)
• Reverse Recovery Charge (Qrr): Ultra-Low (~70nC to 80nC)
• Total Power Dissipation (Pd): 97W to 110W (at Tc = 25°C)
• Operating Junction Temperature (Tj): -55°C to +150°C (or up to +175°C depending on operating class)
• Thermal Resistance, Junction to Case (Rth(j-c)): ~1.3°C/W to 1.5°C/W
• Pinout Configuration: Pin 1: Gate (G), Pin 2: Drain (D), Pin 3: Source (S), Tab: Drain (D)

Features

• 3rd Generation (C3M) SiC Planar Technology: Enables high-frequency operation with lower device capacitance and minimal energy loss per switching cycle.
• 1200V High Breakdown Voltage: Provides high reliability and ample voltage headroom for 400V, 600V, and 800V DC bus architectures.
• Ultra-Low Switching Losses: Fast rise/fall times allow operating frequencies exceeding 100kHz, reducing the physical size and cost of inductors and transformers.
• Robust Body Diode: Features an ultra-fast intrinsic body diode with negligible reverse recovery charge (Qrr), eliminating the need for external freewheeling antiparallel diodes in bridge topologies.
• High Thermal Ruggedness: Silicon carbide's superior thermal conductivity ensures stable on-resistance and low leakage current even at high operating temperatures.

Common Applications

• Solar Inverters & Energy Storage: High-efficiency DC-DC boost stages and grid-tied 3-phase central/string inverters.
• EV Fast Charging & On-Board Chargers (OBC): High-voltage power factor correction (PFC) and isolated resonant DC-DC converter stages.
• Uninterruptible Power Supplies (UPS): Online double-conversion and industrial power backup systems.
• High-Voltage Switch-Mode Power Supplies (SMPS): Phase-shifted full-bridge (PSFB) and LLC resonant converters for telecom and industrial servers.
• Induction Heating & Welding: High-frequency resonant inverter stages in induction cookers, welders, and plasma systems.

Usage Tips

• Gate Driver Selection: Use a dedicated high-speed SiC gate driver capable of delivering +15V to +18V turn-on and 0V to -4V negative turn-off bias to prevent spurious turn-on caused by high dV/dt slew rates.
• Minimizing Parasitic Inductance: Keep gate drive PCB traces as short and wide as possible, routing the gate trace and source return trace tightly together to avoid parasitic oscillation.
• Heatsink Mounting: Use high-thermal-conductivity silicone or mica insulator pads (such as TO-247 / TO-3P size) and an insulating screw bushing when mounting to a grounded heatsink.
• Decoupling & Snubbers: Connect high-voltage, low-ESR ceramic decoupling capacitors directly across the 1200V DC link near the MOSFET pins to suppress high-speed switching inductive spikes.

Datasheet