This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features:

• rDS(ON) = 15mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability

Supplier link: https://www.digchip.com/datasheets/parts/datasheet/161/FDD8878-pdf.php