The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.

Specifications:

Type Designator: AO4468
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd - Maximum Power Dissipation: 3.1W
|Vds| - Maximum Drain-Source Voltage: 30V
|Vgs| - Maximum Gate-Source Voltage: 20V
|Vgs(th)| - Maximum Gate-Threshold Voltage: 2.4V
|Id| - Maximum Drain Current: 10.5A
Tj - Maximum Junction Temperature: 150 C
Qg - Total Gate Charge: 7.5nC
tr - Rise Time: 3.5nS
Coss - Output Capacitance: 110pF
Rds - Maximum Drain-Source On-State Resistance: 0.017Ohm
Package: SO-8

Documentation:

• Datasheet