The EN25T80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The EN25T80 is designed to allow either single Sector at a time or full chip erase operation. The EN25T80 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.

Features:

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 8 Mbit Serial Flash

- 8 M-bit/1024 K-byte/4096 pages

- 256 bytes per programmable page

• High performance

- 100MHz clock rate

- dual data mode

• Low power consumption

- 5 mA typical active current

- 1μA typical power down current

• Uniform Sector Architecture:

- 256 sectors of 4-Kbyte

- 16 blocks of 64-Kbyte

- Any sector or block can be erased individually

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.5ms typical

- Sector erase time: 150ms typical

- Block erase time 800ms typical

- Chip erase time: 10 Seconds typical

• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Commercial and industrial temperature Range

Package: DIP-8

Link to datasheet: https://pdf1.alldatasheet.net/datasheet-pdf/view/1132819/EON/EN25T80-75QCP.html