Specifically designed for Automotive applications, this design of HEXFET ® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Specification

• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 200 W
• Maximum Drain-Source Voltage |Vds|: 75 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 80 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 89 nC
• Rise Time (tr): 80 nS
• Drain-Source Capacitance (Cd): 520 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.0126 Ohm

Datasheet: https://datasheetspdf.com/pdf-file/283530/InternationalRectifier/IRF3007/1