Features:

• Type Designator: TK10A60D
• Marking Code: K10A60D
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 45 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 10 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 25 nC
• Rise Time (tr): 22 nS
• Drain-Source Capacitance (Cd): 135 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Supplier link: https://alltransistors.com/adv/pdfdatasheet_toshiba/tk10a60d5.pdf