The Original AO3415A P-Channel Enhancement Mode Power MOSFET is a compact, high-efficiency surface-mount switching transistor housed in an ultra-low-profile SOT-23 package. Utilizing advanced trench MOSFET technology, the AO3415A delivers exceptionally low on-state resistance (Rds(on)) down to 42mΩ, fast switching speeds, and reliable operation with low gate-drive voltages down to -1.8V. It is widely used in high-side load switching, battery protection circuits, reverse-polarity protection, DC-DC power management, and portable electronic systems.

Specifications

• Part Number / Model: AO3415A (Original Alpha & Omega Semiconductor / SOT-23 SMD Marking: AL, A19T, or equivalent)
• Transistor Type: P-Channel Enhancement Mode Field Effect Transistor (MOSFET)
• Package Type: SOT-23-3L (Small Outline Transistor, 3-Pin SMD)
• Drain-Source Breakdown Voltage (Vds): -20V
• Gate-Source Voltage (Vgs): ±8V
• Continuous Drain Current (Id): -4.0A (at Vgs = -4.5V, Ta = 25°C) / -4.8A peak rating
• Pulsed Drain Current (Idm): -30A
• Static Drain-Source On-Resistance (Rds(on)):
  • < 42m xss=removed xss=removed>
  • < 50m xss=removed xss=removed>
  • < 70m xss=removed xss=removed>
• Gate Threshold Voltage (Vgs(th)): -0.4V to -1.0V (Logic-Level / Sub-2V Drive Compatible)
• Total Power Dissipation (Pd): 1.4W to 1.5W (at Ta = 25°C on standard PCB copper area)
• Total Gate Charge (Qg): ~10nC (Typ. @ Vgs = -4.5V)
• Input Capacitance (Ciss): ~850pF (at Vds = -10V, f = 1MHz)
• Turn-On Delay / Rise Time: ≤ 10ns / ≤ 15ns
• Operating Junction & Storage Temperature: -55°C to +150°C
• Pinout Configuration: Pin 1: Gate (G), Pin 2: Source (S), Pin 3: Drain (D)

Features

• Ultra-Low On-Resistance: Low RDS(on) minimizes I²R conduction losses and heat generation, maximizing efficiency in compact mobile designs.
• Sub-Logic Level Gate Drive: Fully turns ON with gate voltages as low as -1.8V, allowing direct drive from 1.8V, 2.5V, 3.3V, and 5V microcontrollers (ESP32, STM32, Arduino) without auxiliary gate drivers.
• Trench Power MOSFET Technology: Provides high cell density, high pulsed current capability (up to -30A), and reliable ESD robustness.
• Compact SOT-23 Footprint: Saves valuable board space on dense consumer electronics, wearable tech, and IoT breakout boards.
• Fast Switching Speed: Low gate charge (Qg) and low parasitic capacitances enable high-frequency PWM switching with minimal switching losses.

Common Applications

• High-Side Load Switching: Power gating for sub-circuits, display backlights, sensors, and wireless peripherals to extend battery life.
• Reverse-Polarity Protection: Ideal for low-loss power input protection in place of traditional Schottky diodes.
• Battery Management Systems (BMS): Single-cell Li-ion/LiPo battery charging and discharging cutoff switches.
• DC-DC Buck & Boost Converters: High-efficiency synchronous and asynchronous power switching stages.
• Microcontroller Output Driving: Driving small DC motors, solenoids, LED arrays, and 5V/3.3V power rails.

Usage Tips

• Gate Voltage Limit: Do not exceed the maximum Vgs rating of ±8V; when switching higher input voltages (such as 12V), use a resistor divider or Zener diode clamp to keep the gate-to-source voltage within safe limits.
• Thermal Dissipation & PCB Copper: Solder the Drain pin (Pin 3) to a generous copper pour on the PCB to maximize thermal conduction and maintain low operating temperatures under continuous 3A+ loads.
• Gate Pull-Up Resistor: Always place a 10kΩ to 100kΩ pull-up resistor between the Gate and Source pins to ensure the MOSFET defaults to a solid OFF state during microcontroller power-up or boot cycles.
• SMD Soldering Profile: Solder using hot air or fine-tip soldering at 260°C (maximum 10 seconds) or standard reflow soldering profiles to avoid package overheating.

Datasheet