The IRF9640 is a high-voltage, rugged P-Channel power MOSFET housed in a high-power TO-247 (TO-247AC) through-hole package. Utilizing advanced planar stripe and DMOS technology, the IRF9640 is engineered to deliver low on-state resistance (R_DS(ON)), fast switching performance, high avalanche energy ruggedness, and superior thermal dissipation. It is widely used in high-voltage bridge circuits, audio power amplifiers, motor control drives, inverters, and high-side power switching applications.

Specifications

• Brand / Manufacturer: Vishay Siliconix / Infineon (IR) / Industry Standard
• Part Number: IRF9640 / IRF9640PBF
• Transistor Type: P-Channel Power MOSFET
• Drain-Source Breakdown Voltage (V_DS): -200V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): -11A (at T_C = 25°C) / -6.8A (at T_C = 100°C)
• Pulsed Drain Current (I_DM): -44A
• Static Drain-Source On-Resistance (R_DS(ON)): < 0>GS = -10V, I_D = -6.6A)
• Gate Threshold Voltage (V_GS(th)): -2.0V to -4.0V (Typical -3.0V)
• Total Gate Charge (Q_g): Approx. 44nC (at V_GS = -10V)
• Single Pulse Avalanche Energy (E_AS): Up to 700mJ (at I_AS = -11A)
• Maximum Power Dissipation (P_D): 125W to 150W (at T_C = 25°C)
• Operating Junction & Storage Temperature Range: -55°C to +150°C
• Package / Case: TO-247 (TO-247AC / 3-Pin Through-Hole: Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Tab: Drain)

Features

• High Breakdown Voltage (-200V): Safely blocks high reverse voltage spikes, making it ideal for offline switching stages and high-voltage bridge topologies.
• Heavy-Duty TO-247 Package: Large thermal mounting tab provides superior heat dissipation compared to standard TO-220 packages, enabling reliable continuous high-power operation.
• Repetitive Avalanche Rated: Built-in avalanche energy absorption capability ensures robustness against inductive energy kickbacks and line transients.
• Fast Switching Speed: Low gate-to-drain Miller capacitance allows rapid switching transitions, minimizing switching losses in high-frequency PWM converter circuits.
• Complementary Pairing: Acts as the direct P-Channel electrical complement to the standard IRF640 N-Channel MOSFET for symmetrical push-pull and H-bridge configurations.

Common Applications

• High-Voltage DC Motor Drives: High-side power switching in full-bridge (H-bridge) and half-bridge DC motor control systems.
• Audio Power Amplifiers: Complementary Class-AB audio output stages paired with IRF640 N-Channel transistors.
• Switch-Mode Power Supplies (SMPS): High-side switches in resonant converters, buck/boost topologies, and power factor correction circuits.
• Uninterruptible Power Supplies (UPS) & Inverters: Power switching stages for high-voltage DC-to-AC conversion.
• High-Side Solenoid & Actuator Drivers: Controlling high-power inductive coils and industrial automation actuators directly from positive rails.

Usage Tips

• Adequate Heatsinking: For continuous drain currents above 3A or switching loads above 30W, securely mount the TO-247 package to an adequately sized aluminum heatsink using thermal paste and an insulating mica/silicone pad if electrical isolation is needed (Tab is internally tied to Drain).
• Gate Drive Resistor: Connect a 10Ω to 47Ω resistor in series with the Gate (Pin 1) to prevent high-frequency parasitic ringing and protect the driver stage from excessive capacitive inrush current.
• Gate-to-Source Pull-Up: Connect a 10kΩ to 47kΩ pull-up resistor between the Gate and Source (Pin 3) to maintain a default OFF state when the driver signal is disconnected or high-impedance.
• Gate Voltage Clamping: Ensure the Gate-Source voltage (V_GS) stays between -10V and -15V during ON state and does not exceed the ±20V absolute maximum limit; use a 15V Zener diode across Gate and Source to clamp over-voltage transients.

Datasheet