The Original IRLZ44N Logic-Level N-Channel Power MOSFET is a high-performance, fast-switching power field-effect transistor manufactured by Infineon Technologies / International Rectifier. Encapsulated in an industry-standard TO-220AB through-hole package with a metal mounting tab, it is engineered specifically for logic-level gate drive applications. Unlike standard power MOSFETs that require 10V of gate-to-source drive voltage, the IRLZ44N achieves ultra-low on-resistance (RDS(on) down to 22mΩ) with standard 5.0V TTL logic levels and provides excellent conduction down to 3.3V and 4.0V logic drives. Rated for a drain-to-source breakdown voltage of 55V and continuous drain current up to 47A at 25°C, it is widely utilized in microcontroller load switching (Arduino, ESP32, Raspberry Pi, STM32), DC motor speed controllers (PWM), high-current LED dimmer circuits, solenoid and relay actuators, and switch-mode power converters.

Specifications

• Part Number / Model: IRLZ44N / IRLZ44NPBF
• Manufacturer: Infineon Technologies / International Rectifier (HEXFET® Series)
• Transistor Polarity: N-Channel Logic-Level Enhancement Mode MOSFET
• Package Type: TO-220
• Drain-to-Source Breakdown Voltage (VDSS / VDS): 55 V DC
• Continuous Drain Current (ID):
  • At TC = 25°C: 47 A (Continuous, silicon limited)
  • At TC = 100°C: 33 A (Continuous)
• Pulsed Drain Current (IDM): Up to 160 A to 188 A (Pulse width limited by max Tj)
• Static Drain-to-Source On-Resistance (RDS(on)):
  • At VGS = 10V (ID = 25A): Max. 0.022 Ω (22 mΩ)
  • At VGS = 5.0V (ID = 25A): Max. 0.025 Ω (25 mΩ)
  • At VGS = 4.0V (ID = 21A): Max. 0.035 Ω (35 mΩ)
• Gate Threshold Voltage (VGS(th)): 1.0 V (Min.) to 2.0 V (Max.) (at ID = 250 µA, VDS = VGS)
• Gate-to-Source Voltage Rating (VGS): ±16 V (Absolute Maximum)
• Total Gate Charge (Qg): Typ. 38 nC / Max. 48 nC (at VGS = 5.0V, VDS = 44V, ID = 25A)
• Input Capacitance (Ciss): Typ. 1700 pF to 2000 pF (at VDS = 25V, f = 1MHz)
• Output Capacitance (Coss): Typ. 400 pF to 450 pF
• Reverse Transfer Capacitance (Crss): Typ. 250 pF
• Single Pulse Avalanche Energy (EAS): Up to 110 mJ to 210 mJ (Avalanche Rated)
• Total Maximum Power Dissipation (PD): 110 W (at TC = 25°C) / 3.8 W (Free air Ta = 25°C)
• Operating Junction Temperature (TJ): -55°C to +175°C
• Storage Temperature Range (Tstg): -55°C to +175°C
• Thermal Resistance, Junction-to-Case (Rth(j-c)): ~1.4°C/W
• Thermal Resistance, Junction-to-Ambient (Rth(j-a)): ~62°C/W
• Pinout Configuration (TO-220AB - Front View, Metal Tab at Back, Leads Pointing Down):
  • Pin 1 (Left): Gate (G)
  • Pin 2 (Center): Drain (D)
  • Pin 3 (Right): Source (S)
  • Metal Mounting Tab: Internally connected to Pin 2 (Drain)

Features

• True Logic-Level Gate Drive: Optimized gate oxide allows full saturation and low RDS(on) conduction from direct 5V and 3.3V/4V microcontroller outputs without requiring external gate driver ICs.
• Ultra-Low On-Resistance (22mΩ): Minimizes $I^2R$ conduction losses, keeping device temperatures cool even under heavy continuous DC loads.
• High Current & Rugged Avalanche Capability: Capable of handling continuous currents up to 47A and high inductive flyback energy spikes in automotive and motor drive circuits.
• High 175°C Operating Junction Temperature: Exceptional thermal ceiling ensures reliability in dense enclosures, engine bays, and industrial equipment.
• Fast Switching Speed: Low internal capacitance and low gate charge enable efficient PWM frequency operation up to 50 kHz–100 kHz.
• Universal TO-220 Power Footprint: Standard 2.54mm lead spacing fits breadboards, perfboards, and power PCBs, allowing easy heatsink mounting.

Common Applications

• Microcontroller High-Current Load Switching: Direct low-side switching of high-power DC loads from Arduino, ESP32, Raspberry Pi, STM32, and PIC GPIO pins.
• DC Motor Speed Control (PWM): Low-side PWM speed regulation for brushed DC motors, power wheels, and robotics drivetrains.
• High-Power LED Strip & Lighting Dimmers: 12V and 24V single-color or RGB/RGBW LED strip driving and theatrical stage dimmers.
• Inductive Actuators & Solenoid Drivers: High-current drivers for automotive relays, electronic door locks, fuel injectors, and pneumatic valves.
• DC-DC Buck / Boost Power Converters: Low-side switching transistor for high-efficiency switch-mode power converters.

Usage Tips

• Gate-to-Source Pull-Down Resistor (Crucial): Always connect a **10kΩ to 100kΩ resistor directly between the Gate (Pin 1) and Source (Pin 3)**. This discharges the gate capacitance and guarantees the MOSFET remains completely OFF during microcontroller bootup, reset, or when GPIO pins are floating in high-impedance mode.
• Series Gate Damping Resistor: Place a **47Ω to 220Ω resistor in series between the MCU GPIO pin and the Gate (Pin 1)**. This limits inrush gate charging current to protect the microcontroller output pin and prevents high-frequency parasitic ringing.
• Flyback / Freewheeling Diode for Inductive Loads: When switching inductive loads (motors, relays, solenoids), always connect a fast-recovery diode (e.g., 1N5819, 1N5822, or UF4007) in reverse parallel across the load (Cathode to V+, Anode to Drain) to absorb high-voltage back-EMF spikes.
• Heatsink Requirement: While rated for 47A on a heavy heatsink, in free air without a heatsink the TO-220 package can safely dissipate approx. 1.5W to 2.0W (translating to continuous currents up to ~7A–9A at VGS = 5V). For currents exceeding 10A, mount the MOSFET onto an aluminum heatsink.
• Metal Tab Warning: The TO-220 metal mounting tab is internally connected to **Pin 2 (Drain)**. When mounting multiple MOSFETs onto a single shared heatsink, use insulating silicone pads/mica washers and insulating bushings to prevent short circuits between drain nodes.

Datasheet