Designed for general−purpose amplifier and low−speed switching applications.

Features:

• Type Designator: TIP122
• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 5 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 1000

Datasheet:: https://www.onsemi.com/pdf/datasheet/tip120-d.pdf