Designed for general−purpose amplifier and low frequency switching applications.

Features:

• Type Designator: TIP147T
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 80 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 10 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 500

Datasheet: https://www.onsemi.com/pdf/datasheet/tip147t-d.pdf