The IRFP260N HEXFET Power MOSFET is a high-performance N-channel power MOSFET designed for high-current, high-voltage switching applications. Built using advanced HEXFET® technology, it offers low on-resistance, fast switching speed, and excellent thermal performance, making it ideal for power electronics and industrial designs.

With its robust TO-247 package, the IRFP260N can handle large currents efficiently and is well-suited for applications such as inverters, SMPS, motor drives, UPS systems, audio amplifiers, welding machines, and high-power DC switching circuits. Its reliability and efficiency make it a popular choice among engineers, hobbyists, and power electronics designers.

Specifications

• Device Type: N-Channel HEXFET Power MOSFET
• Drain-Source Voltage (V_DSS): 200V
• Continuous Drain Current (I_D): 50A (at 25°C)
• Pulsed Drain Current: 200A
• Gate-Source Voltage (V_GS): ±20V
• Drain-Source On Resistance (R_DS(on)): 0.04Ω (typical)
• Power Dissipation: 300W
• Package Type: TO-247
• Switching Speed: Fast switching
• Operating Junction Temperature: −55°C to +175°C
• Mounting Type: Through-hole
• Applications: Inverters, SMPS, motor controllers, power supplies, audio amplifiers, high-current switching circuits

Datasheet: https://www.digchip.com/datasheets/parts/datasheet/232/IRFP260N-pdf.php