The GT30F124 (marked as 30F124) is a high-speed, high-voltage silicon N-Channel insulated gate bipolar transistor (IGBT) encapsulated in a fully isolated TO-220F (TO-220SIS) through-hole package. Specifically engineered by Toshiba for resonant switching and energy recovery circuits in plasma display panels (PDP), induction heating (IH), and high-power inverters, the 30F124 features a high collector-emitter breakdown voltage of 330V, a continuous DC collector current rating of 30A (with extreme repetitive pulse capability up to 200A), very low collector-emitter saturation voltage (V_CE(sat)), and fast turn-off fall times.

Specifications

• Brand / Manufacturer: Toshiba / Industry Standard
• Part Number / Marking: GT30F124 / 30F124
• Transistor Type: N-Channel Insulated Gate Bipolar Transistor (IGBT)
• Collector-Emitter Voltage (V_CES): 330V
• Gate-Emitter Voltage (V_GES): ±30V
• Continuous DC Collector Current (I_C): 30A (at T_C = 25°C)
• Pulsed Collector Current (I_CP): 200A (100µs single pulse / repetitive peak in PDP sustain circuits)
• Collector-Emitter Saturation Voltage (V_CE(sat)): Typically 2.1V (Max 2.7V @ I_C = 120A, V_GE = 15V)
• Gate-Emitter Threshold Voltage (V_GE(th)): 3.0V to 6.0V (Typical 4.5V @ I_C = 1mA)
• Total Gate Charge (Q_g): Approx. 65nC (at V_GE = 15V)
• Turn-Off Fall Time (t_f): Approx. 50ns to 100ns (Ultra-fast switching)
• Collector Power Dissipation (P_C): 25W (at T_C = 25°C with heatsink)
• Operating Junction Temperature: -55°C to +150°C
• Package / Case: TO-220F / TO-220SIS (Fully Isolated Plastic Overmold, 3-Pin Through-Hole: Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter)

Features

• Extreme Pulsed Current Capability (200A): Purpose-built to handle extreme transient peak currents in high-energy plasma discharge and pulse-forming networks.
• Fully Insulated TO-220F Package: Plastic encapsulated tab provides internal electrical isolation (no mica insulator needed when bolting to a common heatsink).
• Fast Switching Fall Times: Optimized trench gate structure reduces minority carrier storage time, ensuring minimal switching turn-off losses.
• Low Saturation Conduction Losses: Low V_CE(sat) minimizes internal power dissipation during heavy current conduction cycles.
• High Gate Voltage Margin: Wide ±30V V_GES tolerance provides robust protection against transient gate-drive voltage ringing.

Common Applications

• Plasma Display Panels (PDP): Sustain (X-SUS / Y-SUS) drive boards and energy recovery switching stages.
• Induction Heating (IH) & Cooktops: Resonant primary inverter switching stages for high-frequency magnetic heating.
• High-Power Pulse Generators: High-current discharge and strobe firing circuits.
• DC-AC Inverters & Motor Drives: Power switching stages in small motor controls and power conversion systems.
• Solid-State High-Voltage Relays: High-voltage DC pulse switching and load isolation.

Usage Tips

• Gate Drive Voltage: Drive the gate with a solid +15V (V_GE) signal to ensure complete saturation and achieve the lowest possible V_CE(sat) conduction losses; avoid driving directly with 3.3V or 5V logic signals.
• Gate Series Resistor: Install a 5.1Ω to 22Ω series resistor at the Gate (Pin 1) to eliminate parasitic high-frequency ringing without causing excessive turn-off delays.
• Gate Pull-Down Resistor: Connect a 10kΩ resistor across the Gate and Emitter (Pin 3) to keep the IGBT securely OFF during power-up or high-impedance driver states.
• External Freewheeling Diode: The 30F124 does not include an internal anti-parallel freewheeling diode; when driving inductive loads or half-bridge topologies, always place an external ultra-fast recovery diode (such as a US1M or MUR series) across Collector-Emitter.
• Heatsink Thermal Paste: Apply a thin layer of thermal grease between the insulated TO-220F package and the heatsink to optimize heat transfer.

Datasheet