The Original HY3506 / HY3506P N-Channel Enhancement Mode Power MOSFET (60V / 200A / TO-220) is an ultra-high-current, low on-resistance power MOSFET engineered for high-efficiency DC power switching, high-current motor control, synchronous rectification, and battery management systems. Utilizing advanced trench-gate processing technology, it delivers exceptionally low on-state drain-source resistance ($R_{DS(on)}$ typ. 2.4 mΩ to 2.8 mΩ), dramatically minimizing conduction losses ($I^2R$) and thermal buildup during heavy current delivery. Housed in an industry-standard through-hole TO-220 package, it offers a drain-source breakdown voltage of 60V with continuous drain current handling up to 200A (silicon limited) and 100% tested avalanche ruggedness. The HY3506 is widely utilized in electric vehicle (EV) speed controllers, e-bike/scooter motor drives, high-power DC-DC converters, solar inverters, and heavy-duty DC electronic switches.

Specifications

• Part Number / Model: HY3506 / HY3506P
• Transistor Polarity / Type: N-Channel Enhancement Mode Trench Power MOSFET
• Package Type: TO-220-3L (Through-Hole Power Package with Metal Mounting Tab)
• Drain-Source Breakdown Voltage ($V_{DSS}$): 60 V (Min. at $I_D = 250\text{ μA}$, $V_{GS} = 0\text{V}$)
• Gate-Source Voltage ($V_{GS}$): ±20 V Max.
• Continuous Drain Current ($I_D$):
  • At $T_C = 25^\circ\text{C}$: 200 A (Silicon limited) / Typ. 120A–140A (TO-220 lead package limited)
  • At $T_C = 100^\circ\text{C}$: Approx. 140 A
• Pulsed Drain Current ($I_{DM}$): Up to 800 A ($t_p \le 10\text{ μs}$)
• Static Drain-Source On-State Resistance ($R_{DS(on)}$):
  • Typ. 2.4 mΩ (at $V_{GS} = 10\text{V}$, $I_D = 75\text{A}$)
  • Max. 2.8 mΩ (at $V_{GS} = 10\text{V}$, $I_D = 75\text{A}$)
• Gate Threshold Voltage ($V_{GS(th)}$): 2.0 V to 4.0 V (Typ. 3.0 V at $I_D = 250\text{ μA}$)
• Total Power Dissipation ($P_D$): Up to 260 W (at $T_C = 25^\circ\text{C}$)
• Single-Pulse Avalanche Energy ($E_{AS}$): Approx. 1350 mJ ($L = 0.5\text{ mH}$, $V_{DD} = 30\text{V}$)
• Total Gate Charge ($Q_g$): Typ. 165 nC to 185 nC (at $V_{DS} = 30\text{V}$, $V_{GS} = 10\text{V}$, $I_D = 75\text{A}$)
• Input Capacitance ($C_{iss}$): Typ. 9100 pF (at $V_{DS} = 30\text{V}$, $f = 1\text{ MHz}$)
• Output Capacitance ($C_{oss}$): Typ. 1100 pF
• Reverse Transfer Capacitance ($C_{rss}$): Typ. 750 pF
• Body Diode Continuous Forward Current ($I_S$): Up to 200 A
• Body Diode Forward Voltage Drop ($V_{SD}$): Typ. 0.85 V (Max. 1.2 V at $I_S = 75\text{A}$, $V_{GS} = 0\text{V}$)
• Thermal Resistance (Junction-to-Case, $R_{\theta JC}$): 0.58 °C/W
• Thermal Resistance (Junction-to-Ambient, $R_{\theta JA}$): 62 °C/W
• Operating Junction & Storage Temperature ($T_j$, $T_{stg}$): -55°C to +175°C
• Pinout Configuration (TO-220 - Front View, Pins Facing Down):
  • Pin 1: Gate (G)
  • Pin 2: Drain (D) - Connected internally to Metal Mounting Tab
  • Pin 3: Source (S)
  • Mounting Tab: Drain (D)

Features

• Ultra-Low On-Resistance ($R_{DS(on)} \le 2.8\text{ m}\Omega$): Greatly reduces conduction power losses, enabling cool and highly efficient operation under heavy current loads.
• High-Density Trench Technology: Delivers optimal switching speed, extremely low conduction resistance, and exceptional thermal ruggedness.
• High Avalanche Energy Handling (100% $E_{AS}$ Tested): Provides superior resilience against inductive voltage transients and unclamped inductive switching (UIS) typical in heavy motor drives.
• Standard High-Power TO-220 Package: Through-hole footprint mounts easily onto aluminum heatsinks, chassis cooling plates, or custom cooling assemblies.
• Extended Junction Temperature Rating (+175°C): Ensures dependable, long-term continuous operation under extreme thermal and electrical stresses.

Common Applications

• High-Power DC Motor Controllers: PWM speed drivers and H-bridges for electric bikes, scooters, golf carts, winches, and robotics.
• Synchronous Rectification & SMPS: Secondary-side low-loss rectification in high-power industrial and telecom switch-mode power supplies.
• High-Current DC-DC Converters: Buck and boost power conversion stages in solar charge controllers (MPPT) and high-current step-down regulators.
• Battery Management Systems (BMS): Solid-state electronic disconnect, overcurrent, and short-circuit protection for 24V, 36V, and 48V Lithium battery packs.
• Power Inverters & UPS Systems: Primary-stage low-voltage DC switching legs for 12V/24V/48V pure sine wave and modified sine wave inverters.
• High-Current Solid-State Relays: Contactless switching for high-amperage automotive accessories, solenoids, and DC actuators.

Usage Tips

• Heatsink & Thermal Mounting (Crucial): At continuous load currents above **10A to 15A**, mounting the TO-220 package to an appropriately sized aluminum heatsink using thermal compound is mandatory. For continuous currents exceeding 35A–40A, active fan cooling is strongly recommended.
• Tab Electrical Isolation: The metal mounting tab is **internally connected to Pin 2 (Drain)**. If multiple MOSFETs share a common grounded heatsink (such as in an H-bridge or half-bridge configuration), use silicone insulating pads (Sil-Pads) or mica insulators along with insulating shoulder washers on the mounting screws.
• Gate Drive Voltage: The HY3506 is a standard-gate MOSFET requiring a **full gate-to-source drive voltage of $V_{GS} = 10\text{V}$ to $12\text{V}$** to fully saturate and achieve its minimal $2.4\text{ m}\Omega$ on-resistance. Do not drive the gate directly with 3.3V or 5V logic signals from microcontrollers (Arduino/ESP32); always use a dedicated high-current gate driver IC (such as the TC4420, IR2104, or TC4427).
• Driving Large Gate Capacitance: Due to its substantial input capacitance ($C_{iss} \approx 9100\text{ pF}$), use a low gate series resistor (typically **4.7Ω to 10Ω**) to maintain fast switching rise/fall times and minimize switching losses. Always place a **10kΩ pull-down resistor** between Gate and Source to prevent spurious turn-on during power-up.
• Inductive Load Flyback Protection: When switching inductive loads (motors, relays, or solenoids), place an ultra-fast recovery or Schottky freewheeling diode across the load, or add an RC snubber network across Drain and Source to suppress inductive voltage spikes below the 60V limit.

Datasheet