The Original IRF520N N-Channel Advanced HEXFET Power MOSFET (100V / 9.7A / TO-220AB) is a widely utilized, rugged power MOSFET engineered for fast switching, low on-state resistance, and cost-effective power conversion applications. Utilizing planar stripe and advanced HEXFET process technology, it delivers low on-resistance (RDS(on) max. 0.200Ω), high dynamic dV/dt ruggedness, and fully characterized avalanche voltage and current ratings. Encapsulated in an industry-standard through-hole TO-220AB package, it provides continuous drain current handling up to 9.7A at 100V breakdown rating. The IRF520N is commonly used in DC-DC converters, motor speed control, solenoid and relay actuators, high-speed power switching, and microcontroller-interfaced DC load switching stages.

Specifications

• Part Number / Model: IRF520N / IRF520NPbF
• Transistor Polarity: N-Channel Enhancement Mode Power MOSFET
• Package Type: TO-220AB (Through-Hole 3-Lead Power Package with Metal Mounting Tab)
• Drain-Source Breakdown Voltage (V_DSS): 100 V (Min. at V_GS = 0V, I_D = 250µA)
• Gate-Source Voltage (V_GS): ±20 V Max.
• Continuous Drain Current (I_D):
  • At T_C = 25°C: 9.7 A (at V_GS = 10V)
  • At T_C = 100°C: 6.8 A
• Pulsed Drain Current (I_DM): Up to 38 A (Pulse width limited by max T_j)
• Static Drain-Source On-State Resistance (R_DS(on)): Max. 0.200 Ω / 200 mΩ (at V_GS = 10V, I_D = 5.8A)
• Gate Threshold Voltage (V_GS(th)): 2.0 V to 4.0 V (at V_DS = V_GS, I_D = 250µA)
• Total Power Dissipation (P_D): Up to 48 W (at T_C = 25°C)
• Linear Derating Factor: 0.32 W/°C (Above 25°C)
• Single-Pulse Avalanche Energy (E_AS): Approx. 91 mJ (at I_AS = 5.8A, L = 5.4mH)
• Avalanche Current (I_AR): 5.8 A
• Repetitive Avalanche Energy (E_AR): 4.8 mJ
• Peak Diode Recovery dV/dt: 5.0 V/ns
• Total Gate Charge (Q_g): Typ. 16 nC / Max. 24 nC (at V_DS = 80V, V_GS = 10V, I_D = 5.8A)
• Gate-to-Source Charge (Q_gs): 3.0 nC
• Gate-to-Drain ("Miller") Charge (Q_gd): 6.8 nC
• Input Capacitance (C_iss): Typ. 330 pF (at V_DS = 25V, V_GS = 0V, f = 1.0MHz)
• Output Capacitance (C_oss): Typ. 90 pF
• Reverse Transfer Capacitance (C_rss): Typ. 20 pF
• Switching Times (at V_DD = 50V, I_D = 5.8A, R_G = 24Ω, V_GS = 10V):
  • Turn-On Delay Time (t_d(on)): Typ. 4.5 ns
  • Rise Time (t_r): Typ. 20 ns
  • Turn-Off Delay Time (t_d(off)): Typ. 16 ns
  • Fall Time (t_f): Typ. 8.1 ns
• Body Diode Continuous Forward Current (I_S): Up to 9.7 A
• Body Diode Pulsed Current (I_SM): Up to 38 A
• Body Diode Forward Voltage (V_SD): Max. 1.3 V (at I_S = 5.8A, V_GS = 0V)
• Body Diode Reverse Recovery Time (t_rr): Typ. 80 ns (Max. 120 ns at I_F = 5.8A, dI/dt = 100A/µs)
• Thermal Resistance (Junction-to-Case, R_θJC): 3.1 °C/W
• Thermal Resistance (Case-to-Sink, Flat Greased Surface, R_θCS): 0.50 °C/W Typ.
• Thermal Resistance (Junction-to-Ambient, R_θJA): 62 °C/W
• Operating Junction & Storage Temperature (T_j, T_stg): -55°C to +175°C
• Pinout Configuration (TO-220 - Front View, Pins Facing Down):
  • Pin 1: Gate (G) - Control Terminal
  • Pin 2: Drain (D) - Connected internally to Metal Mounting Tab
  • Pin 3: Source (S) - Power Return Terminal
  • Mounting Tab: Drain (D)

Features

• Advanced HEXFET Technology: Delivers fast switching speeds, high dynamic dV/dt ruggedness, and low on-resistance for maximum power transfer efficiency.
• 175°C Operating Temperature Rating: Provides enhanced thermal operating margin and long-term reliability under elevated ambient and enclosure temperatures.
• Fully Avalanche Rated: 100% tested for single-pulse avalanche energy handling (E_AS = 91 mJ) to withstand inductive transient kickbacks.
• Low Gate Charge (Q_g = 16 nC): Enables rapid gate switching with low driving power requirements, minimizing high-frequency switching losses.
• Industry-Standard TO-220 Package: Through-hole mounting allows stand-alone PCB placement for low-power loads or easy screw-mounting to external aluminum heatsinks.

Common Applications

• DC Motor PWM Speed Control: Low-side switching and H-bridge configurations for small-to-medium brushed DC motors and actuators.
• Solenoid & Relay Drivers: High-speed solid-state switching for automotive relays, electronic locks, and pneumatic solenoid valves.
• Switch-Mode Power Supplies (SMPS) & DC-DC Converters: Primary switching stages in buck, boost, and flyback converter topologies.
• LED Dimming & Lighting Drivers: High-frequency PWM dimming for 12V, 24V, and 36V high-brightness LED arrays and strips.
• Microcontroller DC Load Switching: Interfacing microcontroller logic outputs (via intermediate driver stages) to high-current DC loads.

Usage Tips

• Gate Drive Voltage Requirement: The IRF520N is a standard-gate MOSFET (not a logic-level device). To achieve its specified low on-resistance (0.200Ω) and handle currents above 2A–3A, drive the gate with V_GS = 10V to 12V. Driving directly with 3.3V or 5V logic signals will leave the MOSFET in its linear region, causing high internal resistance and rapid overheating under moderate loads. Use a small NPN transistor, optocoupler, or dedicated gate driver IC (e.g., TC4427, TC4420) to shift logic signals to 10V–12V.
• Pull-Down Resistor: Always connect a 10kΩ resistor between the Gate (Pin 1) and Source (Pin 3) to keep the gate pulled to Ground and prevent floating-gate false triggering during microcontroller boot-up.
• Series Gate Resistor: Insert a small series resistor (typically 10Ω to 100Ω) directly in line with the Gate pin to damp high-frequency gate ringing caused by PCB trace inductance and input capacitance.
• Heatsinking: In free air without a heatsink, power dissipation should not exceed 1.5W to 2W (equivalent to approx. 2A–3A continuous current). For loads exceeding 3A continuous, mount the TO-220 tab to an aluminum heatsink with thermal paste.
• Tab Isolation: The metal mounting tab is internally connected to Pin 2 (Drain). If multiple MOSFETs or transistors share a single common grounded heatsink, use mica or silicone insulating pads (Sil-Pads) along with an insulating shoulder bushing on the mounting screw.
• Flyback Protection for Inductive Loads: When switching inductive loads (motors, relays, coils), always connect a fast freewheeling diode (such as a 1N4007 or 1N5819 Schottky) in reverse-parallel across the load to clamp reverse inductive voltage spikes below 100V.

Datasheet