The IRFP4110 is an ultra-low on-resistance, high-current N-Channel HEXFET power MOSFET housed in a heavy-duty TO-247AC through-hole package. Utilizing advanced planar processing technology, the IRFP4110 is engineered to deliver extremely low on-state resistance (R_DS(ON)), fast dynamic switching speeds, and high avalanche energy ruggedness. It is widely used in high-power electric vehicle (EV) motor controllers, solar inverters, high-current DC-DC converters, battery management systems (BMS), and uninterruptible power supplies (UPS).

Specifications

• Brand / Manufacturer: Infineon Technologies / International Rectifier (IR)
• Part Number: IRFP4110 / IRFP4110PBF
• Transistor Type: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage (V_DS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 180A (at T_C = 25°C, Silicon Limited) / 120A (Package Limited)
• Continuous Drain Current (I_D): 130A (at T_C = 100°C)
• Pulsed Drain Current (I_DM): 670A
• Static Drain-Source On-Resistance (R_DS(ON)): < 4>GS = 10V, I_D = 75A)
• Gate Threshold Voltage (V_GS(th)): 2.0V to 4.0V (Typical ~3.0V)
• Total Gate Charge (Q_g): Approx. 150nC (at V_GS = 10V, V_DS = 50V)
• Single Pulse Avalanche Energy (E_AS): Up to 190mJ (at I_AS = 75A)
• Maximum Power Dissipation (P_D): 370W (at T_C = 25°C)
• Operating Junction & Storage Temperature Range: -55°C to +175°C
• Package / Case: TO-247AC (3-Pin Through-Hole: Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Mounting Tab: Drain)

Features

• Ultra-Low On-Resistance (4.5mΩ Max): Drastically reduces conduction losses, minimizes I²R heat generation, and improves system efficiency in high-current switching applications.
• High Continuous Current Capacity: Capable of delivering up to 180A continuous drain current (120A package-limited) with peak pulse handling up to 670A.
• High Operating Junction Temperature (175°C): Provides exceptional thermal headroom and reliability in harsh, high-temperature industrial and automotive environments.
• High Avalanche Ruggedness: 100% avalanche tested to withstand inductive kickback energy spikes without avalanche breakdown failure.
• Heavy-Duty TO-247 Package: Large copper mounting tab enables superior thermal dissipation and direct bolt-on heatsink mounting for high-power thermal management.

Common Applications

• Electric Vehicle & E-Bike Motor Controllers: High-current primary switching in brushless DC (BLDC) motor drivers and synchronous PWM inverters.
• High-Power Pure Sine Wave Inverters: Primary bridge switching for 24V, 48V, and 72V DC-to-AC power inverters and solar converters.
• Battery Management Systems (BMS) & Solid-State Relays: High-current battery disconnect switches and power distribution units.
• High-Power DC-DC Buck/Boost Converters: Synchronous rectification and primary power switching stages in industrial power supplies.
• High-Power Spot Welders & Inductive Heaters: Extreme pulsed-current switching in DIY and industrial spot welding controllers.

Usage Tips

• Heatsink & Thermal Interface: Always mount the TO-247 package to an adequately sized aluminum heatsink using high-performance thermal paste (and an electrical insulator if the heatsink cannot be tied to Drain/V+).
• Dedicated Gate Driver IC: Due to the high gate charge (Q_g ≈ 150nC), use a dedicated high-current MOSFET driver (such as IR2110, TC4420, or UCC27524) to ensure fast charging/discharging and prevent slow switching transitions that cause thermal runaway.
• Gate Series Resistor: Place a 4.7Ω to 15Ω resistor in series with the Gate (Pin 1) to eliminate parasitic high-frequency ringing without causing excessive switching delays.
• Gate-to-Source Pull-Down Resistor: Connect a 10kΩ resistor directly across Gate and Source (Pin 3) to keep the MOSFET solidly in the OFF state during circuit bootup or floating driver conditions.

Datasheet