The Original RU190N08R N-Channel Advanced Power MOSFET (80V / 190A / TO-220) is an ultra-high-current, low on-resistance power MOSFET engineered for high-efficiency power switching, motor control, and synchronous rectification applications. Utilizing advanced trench-gate power MOSFET technology, it achieves an exceptionally low on-state drain-source resistance ($R_{DS(on)}$ typ. 3.4 mΩ to 4.2 mΩ), minimizing conduction power losses and thermal generation during heavy current delivery. Encapsulated in a standard through-hole TO-220 package, it offers a drain-source breakdown voltage of 80V with continuous drain current handling up to 190A (package/silicon limited) and high avalanche energy ruggedness. The RU190N08R is widely utilized in high-power DC motor drivers, electric vehicle (EV) controllers, e-bike speed controllers, high-current DC-DC buck/boost converters, solar inverters, and battery management protection systems (BMS).

Specifications

• Part Number / Model: RU190N08R (RU190N08)
• Transistor Polarity / Type: N-Channel Trench Power MOSFET
• Package Type: TO-220-3L (Through-Hole Power Package with Metal Mounting Tab)
• Drain-Source Breakdown Voltage ($V_{DSS}$): 80 V (Min. at $I_D = 250\text{ μA}$, $V_{GS} = 0\text{V}$)
• Gate-Source Voltage ($V_{GS}$): ±20 V Max.
• Continuous Drain Current ($I_D$):
  • At $T_C = 25^\circ\text{C}$: 190 A (Silicon limited) / Typ. 120A–140A (TO-220 lead package limited)
  • At $T_C = 100^\circ\text{C}$: Approx. 130 A
• Pulsed Drain Current ($I_{DM}$): Up to 760 A ($t_p \le 10\text{ μs}$)
• Static Drain-Source On-State Resistance ($R_{DS(on)}$):
  • Typ. 3.4 mΩ (at $V_{GS} = 10\text{V}$, $I_D = 50\text{A}$)
  • Max. 4.2 mΩ (at $V_{GS} = 10\text{V}$, $I_D = 50\text{A}$)
• Gate Threshold Voltage ($V_{GS(th)}$): 2.0 V to 4.0 V (Typ. 3.0 V at $I_D = 250\text{ μA}$)
• Total Power Dissipation ($P_D$): Up to 250 W (at $T_C = 25^\circ\text{C}$)
• Single-Pulse Avalanche Energy ($E_{AS}$): Approx. 1200 mJ ($L = 0.5\text{ mH}$)
• Total Gate Charge ($Q_g$): Typ. 140 nC to 160 nC (at $V_{DS} = 40\text{V}$, $V_{GS} = 10\text{V}$, $I_D = 50\text{A}$)
• Input Capacitance ($C_{iss}$): Typ. 8200 pF (at $V_{DS} = 40\text{V}$, $f = 1\text{ MHz}$)
• Output Capacitance ($C_{oss}$): Typ. 950 pF
• Reverse Transfer Capacitance ($C_{rss}$): Typ. 600 pF
• Body Diode Continuous Forward Current ($I_S$): Up to 190 A
• Body Diode Forward Voltage Drop ($V_{SD}$): Typ. 0.85 V (Max. 1.2 V at $I_S = 50\text{A}$, $V_{GS} = 0\text{V}$)
• Thermal Resistance (Junction-to-Case, $R_{\theta JC}$): 0.6 °C/W
• Thermal Resistance (Junction-to-Ambient, $R_{\theta JA}$): 62 °C/W
• Operating Junction & Storage Temperature ($T_j$, $T_{stg}$): -55°C to +175°C
• Pinout Configuration (TO-220 - Front View, Pins Facing Down):
  • Pin 1: Gate (G)
  • Pin 2: Drain (D) - Connected internally to Metal Heatsink Tab
  • Pin 3: Source (S)
  • Mounting Tab: Drain (D)

Features

• Ultra-Low On-Resistance ($R_{DS(on)} \le 4.2\text{ m}\Omega$): Greatly reduces conduction losses ($I^2R$), allowing cool operation under heavy current loads and boosting system efficiency.
• High-Density Trench Technology: Delivers an optimal balance of low on-resistance, fast switching speeds, and high thermal ruggedness.
• High Avalanche Energy Ruggedness (100% $E_{AS}$ Tested): Provides strong resilience against inductive voltage spikes and unclamped inductive switching (UIS) events common in high-power motor drives.
• Standard High-Power TO-220 Package: Through-hole design mounts easily to large aluminum heat sinks or active fan-cooled chassis plates for superior heat dissipation.
• High Junction Temperature Rating (+175°C): Engineered to maintain reliable, safe operation in demanding, high-temperature industrial and automotive environments.

Common Applications

• High-Power DC Motor Speed Controllers: H-bridges and PWM speed regulation for electric scooters, e-bikes, golf carts, and heavy robotics.
• Synchronous Rectification & SMPS: Secondary-side high-current rectification in high-efficiency server power supplies and telecom DC power systems.
• High-Current DC-DC Converters: Buck and boost power stages in solar charge controllers (MPPT) and battery voltage regulators.
• Battery Management Systems (BMS): Solid-state electronic disconnect and overcurrent/short-circuit protection switches for 36V, 48V, and 60V Lithium battery packs.
• Inverters & UPS Systems: Primary low-voltage DC switching stages in pure sine wave and modified sine wave power inverters.
• High-Current Solid-State Relays: Electronic switching of heavy DC loads, solenoids, winches, and automotive auxiliary systems.

Usage Tips

• Heatsink & Thermal Mounting (Crucial): At continuous current levels above **10A to 15A**, mounting the TO-220 package to an appropriately sized aluminum heatsink with thermal compound is essential. For continuous operation above 30A–40A, use active fan cooling.
• Tab Electrical Isolation: The metallic mounting tab is **internally connected to Pin 2 (Drain)**. If multiple MOSFETs share a common grounded heatsink (such as in an H-bridge or half-bridge configuration), use silicone insulating pads (Sil-Pads) or mica insulators with insulating shoulder washers on the mounting screws.
• Gate Drive Voltage: The RU190N08R is a standard-gate MOSFET requiring a **full gate-to-source drive voltage of $V_{GS} = 10\text{V}$ to $12\text{V}$** to fully saturate and achieve its ultra-low $3.4\text{ m}\Omega$ on-resistance. Do not drive the gate directly with 3.3V or 5V logic signals from microcontrollers (Arduino/ESP32); use a dedicated high-current MOSFET gate driver IC (such as the TC4420, IR2104, or TC4427).
• Driving Large Gate Capacitance: Due to its large input capacitance ($C_{iss} \approx 8200\text{ pF}$), use a low gate series resistor (typically **4.7Ω to 10Ω**) to ensure sharp rise and fall switching edges, and place a **10kΩ pull-down resistor** between Gate and Source to prevent floating-gate turn-on during power-up.
• Inductive Load Flyback Protection: When switching inductive loads (motors, relays, or solenoids), place a high-speed Schottky or fast-recovery freewheeling diode across the load, or add an RC snubber network across the Drain-Source terminals to clamp reverse inductive voltage spikes below 80V.

Datasheet