The GT25Q101 is a high-speed, high-power silicon N-Channel insulated gate bipolar transistor (IGBT) encapsulated in a heavy-duty TO-247 (TO-3P compatible) through-hole package. Engineered by Toshiba for high-efficiency resonant switching, induction heating (IH) cooktops, and high-frequency power inverter applications, the GT25Q101 features a high collector-emitter breakdown voltage of 1200V, a continuous DC collector current rating of 25A, low saturation voltage (V_CE(sat)), and fast turn-off switching fall times.

Specifications

• Brand / Manufacturer: Toshiba / Industry Standard
• Part Number / Marking: GT25Q101
• Transistor Type: High-Power N-Channel IGBT
• Collector-Emitter Voltage (V_CES): 1200V
• Gate-Emitter Voltage (V_GES): ±25V
• Continuous DC Collector Current (I_C): 25A (at T_C = 25°C)
• Pulsed Collector Current (I_CP): 50A
• Collector-Emitter Saturation Voltage (V_CE(sat)): Typically 2.7V (Max 3.5V @ I_C = 25A, V_GE = 15V)
• Gate-Emitter Threshold Voltage (V_GE(th)): 4.0V to 7.0V (Typical 5.5V @ I_C = 25mA)
• Total Gate Charge (Q_g): Approx. 110nC (at V_GE = 15V)
• Turn-Off Fall Time (t_f): Approx. 0.2µs to 0.4µs (Typical)
• Collector Power Dissipation (P_C): 200W (at T_C = 25°C with heatsink)
• Operating Junction & Storage Temperature: -55°C to +150°C
• Package / Case: TO-247 / TO-3P (3-Pin Through-Hole: Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter, Mounting Tab: Collector)

Features

• High 1200V Breakdown Voltage: Provides high voltage headroom and transient over-voltage safety in 220V/240V mains-fed resonant switching topologies.
• High-Speed Switching: Optimized carrier lifetime technology delivers fast turn-off fall times with minimal tail current and reduced switching losses.
• Low Conduction Losses: Moderate V_CE(sat) provides high overall efficiency during continuous high-current conduction.
• Heavy-Duty TO-247 Package: Large thermal mounting tab enables direct bolting to large heatsinks for high-power thermal dissipation up to 200W.
• Proven Industrial Reliability: Standardized pinout and stable breakdown characteristics engineered for consumer and industrial high-frequency heating appliances.

Common Applications

• Induction Heating (IH) & Cooktops: Primary high-frequency resonant inverter switching stage for induction cookers and commercial heating appliances.
• High-Voltage Resonant Inverters: Quasi-resonant and series resonant DC-to-AC power converters.
• Microwave Inverter Power Supplies: High-voltage switching in inverter-based commercial and domestic microwave ovens.
• Industrial Power Converters: High-voltage DC-DC converters, motor drives, and electronic ballasts.
• Solid-State Pulse Switches: High-voltage pulse generation and energy discharge circuits.

Usage Tips

• Gate Drive Voltage: Drive the gate with a regulated +15V (V_GE) gate signal to ensure deep saturation and minimize V_CE(sat) conduction heating; do not drive directly from low-voltage logic pins.
• Dedicated Gate Driver IC: Use a high-current isolated or bootstrap gate driver (such as TLP250, IR2110, or UCC27524) to ensure fast charging/discharging of the gate capacitance.
• Gate Series & Pull-Down Resistors: Place a 10Ω to 33Ω series resistor at the Gate (Pin 1) to eliminate parasitic oscillation, along with a 10kΩ pull-down resistor across Gate and Emitter (Pin 3).
• External Freewheeling Diode: This IGBT does not include an internal anti-parallel freewheeling diode; when operating in inductive or bridge circuits, always place an external ultra-fast high-voltage recovery diode (such as a 1200V MUR series diode) across Collector-Emitter.
• Heatsink & Insulation: Always mount the tab securely to an aluminum heatsink using thermal paste. Use an insulating mica/silicone pad and bushing if the heatsink must remain electrically isolated from the Collector (Pin 2 and tab are internally connected).

Datasheet